AlGaN-InGaN-GaN Near Ultraviolet Light Emitting Diode

InGaN/GaN light-emitting diode with a polarization tunnel junction

Computational study of an InGaN/GaN nanocolumn light-emitting diode

Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron blocking layer (QWEBL) are designed and grown by a metal− organic chemical-vapor deposition (MOCVD) system. The proposed QWEBL LED structure, in which a p-GaN QW layer is inserted in the p-AlGaN electron blocking layer, not only leads to an improved hole injection but also reduces the electron leaka...

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers

InGaN/GaN multilayer quantum dot (QD) structure is a potential type of active regions for yellow-green light-emitting diodes (LEDs). The surface morphologies and crystalline quality of GaN barriers are critical to the uniformity of InGaN QD layers. While GaN barriers were grown in multi-QD layers, we used improved growth parameters by increasing the growth temperature and switching the carrier ...

Effects of high electrical stress on GaN/InGaN/AlGaN single-quantum-well light-emitting diodes

We report on high-electrical-stress testing of Nichia GaN/InGaN/AlGaN single-quantum-well (SQW) light-emitting diodes. In contrast to our earlier experiments with double-heterostructure LEDs, the present SQW devices have been improved to the point that the encapsulating plastic fails under high electrical stress earlier than the diode itself. ( 1998 Published by Elsevier Science B.V. All rights...